1SS399 - Silicon Epitaxial Planar Type Diode

Toshiba Semiconductor

Datasheet Details

Part number	1SS399
Manufacturer	Toshiba Semiconductor
File Size	885.25 KB
Description	Silicon Epitaxial Planar Type Diode
Datasheet	1SS399 Datasheet
Additional preview pages of the 1SS399 datasheet.

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS399 High Voltage Switching Applications 1SS399 Unit: mm  Small package : SC-61  Low forward voltage : VF(2) = 1.0 V (typ.)  Fast reverse recovery time : trr = 0.5 μs (typ.)  Small total capacitance : CT = 2.5 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 420 V Reverse voltage VR 400 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 2* A Power dissipation PD (Note 1, 3) 200 mW PD (Note 2) 150 Junction temperature Tj (Note 1) 150 °C Tj (Note 2) 125 Storage temperature range Tstg (Note 1) −55 to 150 °C Tstg (Note 2) −55 to 125 1. CATHODE 1 2. CATHODE 2 3. ANODE 2 4.

Published: Mar 23, 2005 |