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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS399
High Voltage Switching Applications
1SS399
Unit: mm
Small package
: SC-61
Low forward voltage
: VF(2) = 1.0 V (typ.)
Fast reverse recovery time : trr = 0.5 μs (typ.)
Small total capacitance : CT = 2.5 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
420
V
Reverse voltage
VR
400
V
Maximum (peak) forward current
IFM
300 *
mA
Average forward current
IO
100 *
mA
Surge current (10ms)
IFSM
2*
A
Power dissipation
PD (Note 1, 3)
200
mW
PD (Note 2)
150
Junction temperature
Tj (Note 1)
150
°C
Tj (Note 2)
125
Storage temperature range
Tstg (Note 1)
−55 to 150
°C
Tstg (Note 2)
−55 to 125
1. CATHODE 1 2. CATHODE 2 3. ANODE 2 4.
1SS399 Datasheet
