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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1953
General Purpose Amplifier Applications Switching and Muting Switch Application
2SA1953
Unit: mm
• Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA
• Large collector current: IC = −500 mA (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
−15 −12 −5 −500 −50 150 125 −55~125
V V V mA mA mW °C °C
JEDEC JEITA
TO-236MOD SC-59
Note: Using continuously under heavy loads (e.g.
2SA1953 Datasheet
