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2SA1972 - TRANSISTOR

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  • ical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U. S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
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Datasheet Details

Part number 2SA1972
Manufacturer Toshiba Semiconductor
File Size 220.74 KB
Description TRANSISTOR
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www.DataSheet.co.kr 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications Unit: mm • High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating −400 −400 −7 −0.5 −1 −0.25 900 150 −55 to 150 Unit V V V A A mW °C °C JEDEC TO-92MOD JEITA ― Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-5J1A temperature, etc.) may cause this product to decrease in the Weight: 0.36 g (typ.
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