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2SD2536
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
2SD2536
Switching Applications Micro Motor Drive, Hammer Drive Applications
Unit: mm
• High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.2 V (max) (IC = 0.7 A, VBH = 4.2 V) • Zener diode included between collector and base
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 85 V
Collector-emitter voltage
VCEO
100 ± 15
V
Emitter-base voltage
VEBO 6 V
Bias voltage
VB 20 V
Collector current
IC 2 A
Base current
IB
0.5 A
JEDEC
TO-92MOD
Collector power dissipation
PC
0.
2SD2536 Datasheet
