2SK3656 Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telemunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telemunications equipment. - - - Output power: PO =28.4d Bm W (typ) Gain: GP = 15.4d B (typ) Drain efficiency: ηD = 64% (typ) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gain-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS(Note 1) ID PD (Note 2) Tch Tstg Rating 7.5 3.5 0.5 3 150 - 45~150 Unit V V A W °C °C JEDEC JEITA ⎯ SC-62 Note: Using continuously under heavy loads (e.g. the application of TOSHIBA 2-5K1D high temperature/current/voltage and the significant change in Weight: 0.05 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Operating Ranges: 0~3.5V Note 2: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB) Marking Part No. (or abbreviation code) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Lot No. .. 1. Gate 2. Source 3. Drain Caution: This device is sensitive to electrostatic discharge. Please make enough tool and equipment earthed when you handle. 2007-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Output power Drain efficiency Power gain...