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2SK3656
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3656
VHF- and UHF-band Amplifier Applications
Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. • • • Output power: PO =28.4dBmW (typ) Gain: GP = 15.4dB (typ) Drain efficiency: ηD = 64% (typ)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gain-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS(Note 1) ID PD (Note 2) Tch Tstg Rating 7.5 3.
2SK3656 Datasheet
