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2SK3658
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)
2
2SK3658
DC−DC Converter, Relay Drive and Motor Drive Applications
z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement−mode : RDS (ON) = 0.23 Ω (typ.) : |Yfs| = 2.0 S (typ.) Unit: mm
: IDSS = 100 μA (max) (VDS = 60 V) : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD Tch Tstg Pulse (Note 1) Rating 60 60 ±20 2 6 0.5 1.
2SK3658 Datasheet
