2SK3658 Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - π- MOSV) DC- DC Converter, Relay Drive and Motor Drive Applications z Low drain- source ON resistance z High forward transfer admittance z Low leakage current z Enhancement- mode : RDS (ON) = 0.23 Ω (typ.) : |Yfs| = 2.0 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 60 V) : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1m A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain- source voltage Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD Tch Tstg Pulse (Note 1) Rating 60 60 ±20 2 6 0.5 1.5 150 - 55 to 150 Unit V V V A W W °C °C 3 1 2 Drain power dissipation (Tc = 25°C) Drain power dissipation Channel temperature Storage temperature range (Note 2) JEDEC JEITA TOSHIBA ⎯ SC-62 2-5K1B Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm) Weight: 0.05 g (typ.) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to ambient Symbol Rth (ch- a) Max 250 Unit °C / W This transistor is an electrostatic sensitive device. Please handle with caution. Marking Lot no. .. Week of manufacture Year of manufacture: last decimal digit of the year of manufacture Product no. (abbr.) 2006-11-17 Electrical Characteristics...