2SK3670 - Silicon N-Channel MOS Type Field Effect Transistor

Toshiba

Datasheet Details

Part number	2SK3670
Manufacturer	Toshiba
File Size	164.41 KB
Description	Silicon N-Channel MOS Type Field Effect Transistor
Datasheet	2SK3670 Datasheet

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Other Datasheets by Toshiba

Part Number	Description
2SK367	N-Channel MOSFET
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Full PDF Text Transcription (Reference)

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2SK3670 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3670 Chopper Regulator and DC−DC Converter Applications Unit: mm z 2.5V-Gate Drive z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: |Yfs| = 2.1 S (typ.) z Low leakage current: IDSS = 100 μA (max) (VDS = 150 V) z Enhancement mode: Vth = 0.5 to 1.