2SK364
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
Unit: mm
- High breakdown voltage: VGDS =
- 40 V
- High input impedance: IGSS =
- 1.0 n A (max) (VGS =
- 30 V)
- Low RDS (ON): RDS (ON) = 50 Ω (typ.) (IDSS = 5 m A)
- plementary to 2SJ104
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDS IG PD Tj Tstg
Rating
-40 10 400 125 -55~125
Unit
V m A m W °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1D
Weight: 0.21 g (typ.)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate cut-off current Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Drain-source ON resistance
IGSS V (BR) GDS
VGS = -30 V, VDS = 0 VDS = 0, IG =...
