2SK368
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Audio Frequency and High Voltage Amplifier Applications Constant Current Applications
Unit: mm
- High breakdown voltage: VGDS =
- 100 V (min)
- High input impedance: IGSS =
- 1.0 n A (max) (VGS =
- 80 V)
- Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDS IG PD Tj Tstg
Rating
-100 10 150 125
-55~125
Unit
V m A m W °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1B
Weight: 0.012 g (typ.)
Characteristics
Symbol
Test Condition
Gate cut-off current Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance
Noise figure
IGSS
VGS = -80 V, VDS = 0
V (BR) GDS VDS = 0, IG = -100 m A
IDSS VDS = 10 V, VGS = 0
(Note)
VGS (OFF) ïYfsï Ciss...
