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2SK3743
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
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2SK3743
Unit: mm
Switching Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDSS = 450 V) Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 ±30 13 52 40 350 13 4.
2SK3743 Datasheet
