GT40Q321 - Silicon N-Channel IGBT

Toshiba

Datasheet Details

Part number	GT40Q321
Manufacturer	Toshiba
File Size	175.65 KB
Description	Silicon N-Channel IGBT
Datasheet	GT40Q321 Datasheet

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GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application · · · · · The 5th generation Enhancement-mode High speed : tf = 0.41 µs (typ.) (IC = 40A) Low saturation voltage: VCE (sat) = 2.8 V (typ.