Silicon N-channel IGBT
| Part number | GT40Q321 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 175.65 KB |
| Description | Silicon N-Channel IGBT |
| Datasheet | GT40Q321_ToshibaSemiconductor.pdf |
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GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application · · · · · The 5th generation Enhancement-mode High speed : tf = 0.41 µs (typ.) (IC = 40A) Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A) FRD included between emitter and collector Unit:.
| Part Number | Description |
|---|---|
| GT40Q322 | Silicon N-Channel IGBT |
| GT40Q323 | Silicon N-Channel IGBT |
| GT40G121 | Silicon N-Channel IGBT |
| GT40J321 | Silicon N-Channel IGBT |
| GT40J322 | Silicon N-Channel IGBT |
| GT40M101 | SILICON N-CHANNEL IGBT |
| GT40M301 | Silicon N-Channel MOSFET |
| GT40T101 | Silicon N-Channel MOSFET |
| GT40T301 | Silicon N-Channel IGBT |
| GT40T302 | Silicon N-Channel IGBT |
