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GT40J322
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40J322
Current Resonance Inverter Switching Application
• FRD included between emitter and collector • Enhancement mode type • High-speed IGBT: tf = 0.20 μs (typ.) (IC = 40 A) • Low saturation voltage: VCE (sat) = 1.7 V (typ.) (IC = 40 A)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
DC Collector current
1ms
DC Diode forward current
1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature
VCES VGES
IC ICP IF IFP
PC
Tj Tstg
600
V
± 25
V
40 A
100
30 A
60
120
W
150
°C
−55 to 150
°C
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g.
GT40J322 Datasheet
