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GT40J322 - Silicon N-Channel IGBT

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Part number GT40J322
Manufacturer Toshiba Semiconductor
File Size 333.22 KB
Description Silicon N-Channel IGBT
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GT40J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40J322 Current Resonance Inverter Switching Application • FRD included between emitter and collector • Enhancement mode type • High-speed IGBT: tf = 0.20 μs (typ.) (IC = 40 A) • Low saturation voltage: VCE (sat) = 1.7 V (typ.) (IC = 40 A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage DC Collector current 1ms DC Diode forward current 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature VCES VGES IC ICP IF IFP PC Tj Tstg 600 V ± 25 V 40 A 100 30 A 60 120 W 150 °C −55 to 150 °C JEDEC ⎯ JEITA ⎯ TOSHIBA 2-16C1C Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g.
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