Datasheet Summary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Current Resonance Inverter Switching Application
- FRD included between emitter and collector
- Enhancement mode type
- High-speed IGBT: tf = 0.20 μs (typ.) (IC = 40 A)
- Low saturation voltage: VCE (sat) = 1.7 V (typ.) (IC = 40 A)
Unit:...