GT40M301 Description
GT40M301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40M301 HIGH POWER SWITCHING APPLICATIONS Unit: mm l The 3rd Generation l FRD Included Between Emitter and Collector l Enhancement−Mode l High Speed IGBT : trr = 0.7µs (TYP.) l Low Saturation Voltage.
GT40M301 Key Features
- The 3rd Generation
- FRD Included Between Emitter and Collector
- Enhancement−Mode
- High Speed IGBT : tf = 0.25µs (TYP.) FRD : trr = 0.7µs (TYP.)
- Low Saturation Voltage : VCE (sat) = 3.4V (MAX.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector−Emitt