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GT40M301
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE
GT40M301
HIGH POWER SWITCHING APPLICATIONS
Unit: mm
l The 3rd Generation
l FRD Included Between Emitter and Collector
l Enhancement−Mode
l High Speed IGBT : tf = 0.25µs (TYP.) FRD : trr = 0.7µs (TYP.)
l Low Saturation Voltage : VCE (sat) = 3.4V (MAX.)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Collector−Emitter Voltage Gate−Emitter Voltage
Collector Current
Emitter−Collector Foward Current
Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range Screw Torque
DC 1ms DC 1ms
SYMBOL
VCES VGES
IC ICP IECF IECFP
PC
Tj Tstg ―
RATING
900 ±25 40 80 15 120
200
150 −55~150
0.8
EQUIVALENT CIRCUIT
UNIT
V V A A A A
W
°C °C N·m
JEDEC JEITA TOSHIBA
Weight: 9.
GT40M301 Datasheet
