Datasheet Summary
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE
HIGH POWER SWITCHING APPLICATIONS
Unit: mm l The 3rd Generation l FRD Included Between Emitter and Collector l Enhancement- Mode l High Speed IGBT : tf = 0.25µs (TYP.) FRD : trr = 0.7µs (TYP.) l Low Saturation Voltage : VCE (sat) = 3.4V (MAX.)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Collector- Emitter Voltage Gate- Emitter Voltage
Collector Current
Emitter- Collector Foward Current
Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range Screw Torque
DC 1ms DC 1ms
SYMBOL
VCES VGES
IC ICP IECF IECFP
Tj Tstg ―
RATING
900 ±25 40 80 15 120
- 55~150
EQUIVALEN...