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GT40M301 - Silicon N-Channel MOSFET

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Part number GT40M301
Manufacturer Toshiba Semiconductor
File Size 257.25 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet GT40M301 Datasheet
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Full PDF Text Transcription

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GT40M301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40M301 HIGH POWER SWITCHING APPLICATIONS Unit: mm l The 3rd Generation l FRD Included Between Emitter and Collector l Enhancement−Mode l High Speed IGBT : tf = 0.25µs (TYP.) FRD : trr = 0.7µs (TYP.) l Low Saturation Voltage : VCE (sat) = 3.4V (MAX.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector−Emitter Voltage Gate−Emitter Voltage Collector Current Emitter−Collector Foward Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range Screw Torque DC 1ms DC 1ms SYMBOL VCES VGES IC ICP IECF IECFP PC Tj Tstg ― RATING 900 ±25 40 80 15 120 200 150 −55~150 0.8 EQUIVALENT CIRCUIT UNIT V V A A A A W °C °C N·m JEDEC JEITA TOSHIBA Weight: 9.
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