Silicon N-channel IGBT
| Part number | GT40J321 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 366.84 KB |
| Description | Silicon N-Channel IGBT |
| Datasheet | GT40J321-ToshibaSemiconductor.pdf |
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GT40J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40J321 Current Resonance Inverter Switching Application FRD included between emitter and collector Enhancement mode type High-speed IGBT: tf = 0.11 μs (typ.) (IC = 40 A) Low saturation voltage: VCE (sat) = 2.0 V (typ.) (IC = 40 A) Unit:.
| Part Number | Description |
|---|---|
| GT40J322 | Silicon N-Channel IGBT |
| GT40G121 | Silicon N-Channel IGBT |
| GT40M101 | SILICON N-CHANNEL IGBT |
| GT40M301 | Silicon N-Channel MOSFET |
| GT40Q321 | Silicon N-Channel IGBT |
| GT40Q322 | Silicon N-Channel IGBT |
| GT40Q323 | Silicon N-Channel IGBT |
| GT40T101 | Silicon N-Channel MOSFET |
| GT40T301 | Silicon N-Channel IGBT |
| GT40T302 | Silicon N-Channel IGBT |
