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GT40J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40J321
Current Resonance Inverter Switching Application
• • • • FRD included between emitter and collector Enhancement mode type High-speed IGBT: tf = 0.11 μs (typ.) (IC = 40 A) Low saturation voltage: VCE (sat) = 2.0 V (typ.) (IC = 40 A) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms DC 1ms Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 600 ± 25 40 100 30 60 120 150 −55 to 150 Unit V V A
Diode forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature
A
JEDEC
W °C °C
⎯ ⎯ 2-16C1C
JEITA TOSHIBA
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g.
GT40J321 Datasheet
