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GT40J321 - Silicon N-Channel IGBT

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Part number GT40J321
Manufacturer Toshiba Semiconductor
File Size 366.84 KB
Description Silicon N-Channel IGBT
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GT40J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40J321 Current Resonance Inverter Switching Application • • • • FRD included between emitter and collector Enhancement mode type High-speed IGBT: tf = 0.11 μs (typ.) (IC = 40 A) Low saturation voltage: VCE (sat) = 2.0 V (typ.) (IC = 40 A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms DC 1ms Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 600 ± 25 40 100 30 60 120 150 −55 to 150 Unit V V A Diode forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature A JEDEC W °C °C ⎯ ⎯ 2-16C1C JEITA TOSHIBA Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g.
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