Datasheet Summary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
The 4th Generation Current Resonance Inverter Switching Applications
Unit: mm
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- Enhancement-mode High speed: tf = 0.30 µs (typ.) (IC = 60 A) Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 400 ±25 40 100 100 150 -55~150 Unit V V A W °C °C
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
JEDEC JEITA TOSHIBA
TO-220AB ― 2-10P1C
Electrical Characteristics (Ta = 25°C)
Characteristics Gate...