GT40G121 - Silicon N-Channel IGBT

Toshiba

Datasheet Details

Part number	GT40G121
Manufacturer	Toshiba
File Size	139.16 KB
Description	Silicon N-Channel IGBT
Datasheet	GT40G121 Datasheet

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GT40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40G121 The 4th Generation Current Resonance Inverter Switching Applications Unit: mm · · · Enhancement-mode High speed: tf = 0.30 µs (typ.) (IC = 60 A) Low saturation voltage: VCE (sat) = 1.8 V (typ.