| Part number | GT40G121 |
|---|---|
| Download | GT40G121 Datasheet (PDF) |
| File Size | 139.16 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
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| Part Number | Description |
|---|---|
| GT40J321 | Silicon N-Channel IGBT |
| GT40J322 | Silicon N-Channel IGBT |
| GT40M101 | SILICON N-CHANNEL IGBT |
| GT40M301 | Silicon N-Channel MOSFET |
| GT40Q321 | Silicon N-Channel IGBT |
GT40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40G121 The 4th Generation Current Resonance Inverter Switching Applications Unit: mm · · · Enhancement-mode High speed: tf = 0.30 µs (typ.) (IC = 60 A) Low saturation voltage:.
