Datasheet Summary
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N- CHANNEL IGBT
HIGH POWER SWITCHING APPLICATIONS
Unit: mm l High Input Impedance l High Speed l Low Saturation Voltage l Enhancement- Mode
: tf = 0.4µs (Max.) : VCE(sat) = 3.4V (Max.)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Collector- Emitter Voltage Gate- Emitter Voltage
Collector Current
Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range Screw Torque
DC 1ms
SYMBOL
VCES VGES
IC ICP
Tj Tstg ―
RATING
900 ±25 40 80
- 55~150
UNIT V V
W °C °C N- m
JEDEC JEITA TOSHIBA
Weight: 5.8g
― ― 2- 16F
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Gate Leakage...