GT40M101 Description
GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT40M101 HIGH POWER SWITCHING APPLICATIONS Unit: mm l High Input Impedance l High Speed l Low Saturation Voltage l Enhancement−Mode : Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
GT40M101 Key Features
- High Input Impedance
- High Speed
- Low Saturation Voltage
- Enhancement−Mode : tf = 0.4µs (Max.) : VCE(sat) = 3.4V (Max.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC C