The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
GT40M101
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT
GT40M101
HIGH POWER SWITCHING APPLICATIONS
Unit: mm
l High Input Impedance l High Speed l Low Saturation Voltage l Enhancement−Mode
: tf = 0.4µs (Max.) : VCE(sat) = 3.4V (Max.)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Collector−Emitter Voltage Gate−Emitter Voltage
Collector Current
Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range Screw Torque
DC 1ms
SYMBOL
VCES VGES
IC ICP
PC
Tj Tstg ―
RATING
900 ±25 40 80
90
150 −55~150
0.8
UNIT V V
A
W °C °C N·m
JEDEC JEITA TOSHIBA
Weight: 5.
GT40M101 Datasheet
