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GT40M101 - SILICON N-CHANNEL IGBT

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Part number GT40M101
Manufacturer Toshiba Semiconductor
File Size 225.97 KB
Description SILICON N-CHANNEL IGBT
Datasheet download datasheet GT40M101 Datasheet
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Full PDF Text Transcription

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GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT40M101 HIGH POWER SWITCHING APPLICATIONS Unit: mm l High Input Impedance l High Speed l Low Saturation Voltage l Enhancement−Mode : tf = 0.4µs (Max.) : VCE(sat) = 3.4V (Max.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector−Emitter Voltage Gate−Emitter Voltage Collector Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range Screw Torque DC 1ms SYMBOL VCES VGES IC ICP PC Tj Tstg ― RATING 900 ±25 40 80 90 150 −55~150 0.8 UNIT V V A W °C °C N·m JEDEC JEITA TOSHIBA Weight: 5.
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