Silicon N-channel IGBT
| Part number | GT40Q322 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 116.90 KB |
| Description | Silicon N-Channel IGBT |
| Datasheet | GT40Q322_ToshibaSemiconductor.pdf |
|
|
GT40Q322 TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT Preliminary .. mm Voltage Resonance Inverter Switching Application Enhancement-mode High speed : 4.6 g (typ.) Thermal Characteristics Characteristics (IGBT) (diode) Symbol Rth (j-c) Rth (j-c) Max 0.625 1.79 Unit °C/W °C/W Equivalent Circuit Collector Gate Emitter 1 2003-07-07 GT40Q322 (Ta = 25°C) Characteristics Gate leakage current Collector...
| Part Number | Description |
|---|---|
| GT40Q321 | Silicon N-Channel IGBT |
| GT40Q323 | Silicon N-Channel IGBT |
| GT40G121 | Silicon N-Channel IGBT |
| GT40J321 | Silicon N-Channel IGBT |
| GT40J322 | Silicon N-Channel IGBT |
| GT40M101 | SILICON N-CHANNEL IGBT |
| GT40M301 | Silicon N-Channel MOSFET |
| GT40T101 | Silicon N-Channel MOSFET |
| GT40T301 | Silicon N-Channel IGBT |
| GT40T302 | Silicon N-Channel IGBT |
