GT40Q322 Description
GT40Q322 TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT Preliminary .. mm Voltage Resonance Inverter Switching Application Enhancement-mode High speed : 4.6 g (typ.) Thermal Characteristics Characteristics (IGBT) (diode) Symbol Rth (j-c) Rth (j-c) Max 0.625 1.79 Unit °C/W °C/W Equivalent Circuit Collector Gate Emitter 1 2003-07-07 GT40Q322 (Ta = 25°C) Characteristics Gate leakage current Collector...