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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J36FS
SSM3J36FS
○ Power Management Switches
• 1.5-V drive • Low ON-resistance: Ron = 3.60 Ω (max) (@VGS = -1.5 V)
: Ron = 2.70 Ω (max) (@VGS = -1.8 V) : Ron = 1.60 Ω (max) (@VGS = -2.8 V) : Ron = 1.31 Ω (max) (@VGS = -4.5 V)
Absolute Maximum Ratings (Ta = 25 °C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC Pulse
Drain power dissipation
Channel temperature
Storage temperature range
VDSS
-20
V
VGSS
±8
V
ID
-330 mA
IDP
-660
PD (Note1)
150
mW
Tch
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
SSM3J36FS Datasheet
