SSM5G02TU datasheet by Toshiba.
| Part number | SSM5G02TU |
|---|---|
| Datasheet | SSM5G02TU_ToshibaSemiconductor.pdf |
| File Size | 219.44 KB |
| Manufacturer | Toshiba |
| Description | DC-DC Converter |
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SSM5G02TU Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5G02TU DC-DC Converter bined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Unit: 7 mg (typ.) Ratings (Ta = 25°C) MOSFET, DIODE MON Characteristics Symbol Rating Unit Storage temperature Operating temperature Tstg −55 to 125 °C Topr (Note 3) −40 to 85 °C Note:.
| Part Number | Description |
|---|---|
| SSM5G01TU | MOSFET/Diode |
| SSM5G04TU | DC-DC Converter |
| SSM5G09TU | DC-DC Converter |
| SSM5G10TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5G11TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H01TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H03TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H05TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H06FE | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H07TU | Silicon Epitaxial Schottky Barrier Diode |
