SSM5G02TU Description
SSM5G02TU Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5G02TU DC-DC Converter bined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Unit: 7 mg (typ.) Ratings (Ta = 25°C) MOSFET, DIODE MON Characteristics Symbol Rating Unit Storage temperature Operating temperature Tstg −55 to 125 °C Topr (Note 3) −40 to 85 °C Note:.