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SSM5G09TU Datasheet DC-DC Converter

Manufacturer: Toshiba

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Overview

SSM5G09TU Composite Devices Silicon P-Channel MOS (U-MOSIII)/Epitaxial Schottky Barrier SSM5G09TU 1.

Applications • DC-DC Converters 2.

Key Features

  • (1) Combined an P-channel MOSFET and a diode in one package. (2) Low RDS(ON) and Low VF 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 130 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 200 mΩ (max) (@VGS = -2.5 V) 3. Packaging and Internal Circuit 1: Gate 2: Source 3: Anode 4: Cathode 5: Drain UFV 4. Absolute Maximum Ratings (Note) 4.1. Absolute Maximum Ratings of the MOSFET (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage Gate-sou.

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