SSM5G11TU datasheet by Toshiba.
| Part number | SSM5G11TU |
|---|---|
| Datasheet | SSM5G11TU-ToshibaSemiconductor.pdf |
| File Size | 925.33 KB |
| Manufacturer | Toshiba |
| Description | Silicon Epitaxial Schottky Barrier Diode |
|
|
SSM5G11TU Silicon P Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5G11TU DC-DC Converter Applications 4-V drive bined a P-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Unit: 7 mg (typ.) MOSFET and Diode (Ta = 25°C) Characteristics Storage temperature range Symbol Tstg Rating −55 to125 Unit °C Note:.
| Part Number | Description |
|---|---|
| SSM5G10TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5G01TU | MOSFET/Diode |
| SSM5G02TU | DC-DC Converter |
| SSM5G04TU | DC-DC Converter |
| SSM5G09TU | DC-DC Converter |
| SSM5H01TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H03TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H05TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H06FE | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H07TU | Silicon Epitaxial Schottky Barrier Diode |
