SSM5G11TU Description
SSM5G11TU Silicon P Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5G11TU DC-DC Converter Applications 4-V drive bined a P-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Unit: 7 mg (typ.) MOSFET and Diode (Ta = 25°C) Characteristics Storage temperature range Symbol Tstg Rating −55 to125 Unit °C Note:.