SSM5G10TU datasheet by Toshiba.
| Part number | SSM5G10TU |
|---|---|
| Datasheet | SSM5G10TU-ToshibaSemiconductor.pdf |
| File Size | 906.40 KB |
| Manufacturer | Toshiba |
| Description | Silicon Epitaxial Schottky Barrier Diode |
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SSM5G10TU Silicon P Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5G10TU DC-DC Converter Applications 1.8-V drive bines a P-channel MOSFET and a Schottky barrier diode in one package. Low RDS(ON) and Low VF Unit: 7 mg (typ.) MOSFET and Diode (Ta = 25°C) Characteristics Storage temperature range Symbol Tstg Rating −55 to 125 Unit °C Note:.
| Part Number | Description |
|---|---|
| SSM5G11TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5G01TU | MOSFET/Diode |
| SSM5G02TU | DC-DC Converter |
| SSM5G04TU | DC-DC Converter |
| SSM5G09TU | DC-DC Converter |
| SSM5H01TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H03TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H05TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H06FE | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H07TU | Silicon Epitaxial Schottky Barrier Diode |
