SSM5G04TU Description
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5G04TU DC-DC Converter bined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Unit: 7 mg (typ.) Ratings (Ta = 25°C) MOSFET, DIODE MON Characteristics Storage temperature Operating temperature Symbol Tstg Topr (Note 3) Rating −55~125 −40~85 Unit °C °C Note:.