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TK35S04K3L - Silicon N-Channel MOSFET

Key Features

  • (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 8.2 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK35S04K3L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source Start of commercial production 2011-04 1 2014-08-04 Rev.5.0 TK35S04K3L 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit.

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Datasheet Details

Part number TK35S04K3L
Manufacturer Toshiba
File Size 247.85 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK35S04K3L Datasheet

Full PDF Text Transcription for TK35S04K3L (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TK35S04K3L. For precise diagrams, and layout, please refer to the original PDF.

MOSFETs Silicon N-channel MOS (U-MOS) TK35S04K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 ...

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DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 8.2 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK35S04K3L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source Start of commercial production 2011-04 1 2014-08-04 Rev.5.0 TK35S04K3L 4.

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