TPC8040-H Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm - Small footprint due to a small and thin package - High-speed switching - Small gate charge: QSW = 5.1 nC (typ.) - Low drain-source ON-resistance: RDS (ON) = 6.4 mΩ (typ.) - High forward transfer admittance: |Yfs| = 48 S (typ.) - Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) - Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2...