Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
Lithium-Ion Battery Applications Portable Equipment Applications Notebook PC Applications
Unit: mm
- Small footprint due to a small and thin package
- Low drain-source ON-resistance: RDS (ON) = 2.7 mΩ (typ.)
- High forward transfer admittance: |Yfs| = 42 S (typ.)
- Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
- Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1...