Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications
Unit: mm
- Small footprint due to a small and thin package
- High-speed switching
- Small gate charge: QSW = 23 nC (typ.)
- Low drain-source ON-resistance:
RDS (ON) = 2.7 mΩ (typ.)
- High forward transfer admittance: |Yfs| = 67 S (typ.)
- Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
- Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1...