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TPC8041 - Field Effect Transistor

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  • ons. 7 2008-06-24.

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TPC8041 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8041 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications • • • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 5.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 26 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.
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