Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications
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- Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 11 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 5.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 62 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) Unit:...