TPC8117 Overview
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ) TPC8117 Lithium Ion Battery Applications Notebook PC Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance : RDS (ON) = 3.0 mΩ (typ.) • High forward transfer admittance : |Yfs| = 54 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)