Datasheet Summary
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ)
Notebook PC Applications
Unit: mm
- -
- -
- Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 5.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 36 S (typ.) Low leakage current: IDSS =
- 10 μA (max) (VDS =
- 30 V) Enhancement mode: Vth =
- 0.8 to
- 2.0 V (VDS =
- 10 V, ID =
- 1...