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TPC8119
TOSHIBA Field Effect Transistor
Silicon P Channel MOS Type (U-MOSV)
TPC8119
Lithium-Ion Battery Applications Load switch Applications Notebook PC Applications
• • • • • Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 10 mΩ (typ.) High forward transfer admittance: |Yfs| = 24 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −30 −30 ±20 −10 −40 1.9 1.0 67 −10 0.