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TPC8119 - P-Channel MOSFET

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Datasheet Details

Part number TPC8119
Manufacturer Toshiba
File Size 227.32 KB
Description P-Channel MOSFET
Datasheet download datasheet TPC8119 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com TPC8119 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPC8119 Lithium-Ion Battery Applications Load switch Applications Notebook PC Applications • • • • • Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 10 mΩ (typ.) High forward transfer admittance: |Yfs| = 24 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −30 −30 ±20 −10 −40 1.9 1.0 67 −10 0.
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