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TPC8210 - N-Channel MOSFET

Key Features

  • computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc. ). These.

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Datasheet Details

Part number TPC8210
Manufacturer Toshiba
File Size 297.60 KB
Description N-Channel MOSFET
Datasheet download datasheet TPC8210 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPC8210 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III) TPC8210 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications z Low drain−source ON resistance: RDS (ON) = 11 mΩ (typ.) z High forward transfer admittance: |Yfs| = 13 S (typ.) z Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) z Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 30 30 ±20 8 32 1.5 W PD(2) 1.