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TPC8216-H - N-Channel MOSFET

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  • for complying with safety standards and for providing adequate designs and safeguards for thei.

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www.DataSheet4U.com TPC8216-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPC8216-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable-Equipment Applications • • • • • • • Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 13.6 mΩ (typ.) High forward transfer admittance: |Yfs| = 19 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.