TPC8214-H
TPC8214-H is N-Channel MOSFET manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
High-Efficiency DC／DC Converter Applications CCFL Inverters
Unit: mm
- Small footprint due to a small and thin package
- High-speed switching
- Small gate charge: QSW = 2.0 n C (typ.)
- Low drain-source ON-resistance: RDS (ON) = 130 mΩ (typ.)
- High forward transfer admittance: |Yfs| =5.4 S (typ.)
- Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
- Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain- source voltage
Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage
Drain current
DC Pulse
(Note 1) (Note 1)
Drain power dissipation
Single-device operation (Note 3a)
(t = 10 s)
Single-device value
(Note 2a) at dual operation
(Note 3b)
Drain power dissipation
Single-device operation (Note 3a)
(t = 10 s)
Single-device value
(Note 2b) at dual operation
(Note 3b)
Single-pulse avalanche energy (Note 4)
Avalanche current
Repetitive avalanche energy (Note 2a, Note 3b, Note 5)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD (1)
PD...
