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TPC8214-H - N-Channel MOSFET

Key Features

  • usage in general electronics.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPC8214-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8214-H High-Efficiency DC／DC Converter Applications CCFL Inverters Unit: mm • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 2.0 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 130 mΩ (typ.) • High forward transfer admittance: |Yfs| =5.4 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) • Enhancement mode: Vth = 1.1 to 2.