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TPC8213-H www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPC8213-H
High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications
• • • • • • • Small footprint due to small and thin package High-speed switching Small gate charge: QSW = 2.9 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 40 mΩ (typ.) High forward transfer admittance: |Yfs| =11 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 1.1 to 2.