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TPCF8A01 www.DataSheet4U.com
TOSHIBA Multi-Chip Device Silicon N Channel MOS Type (U-MOS III) / Schottky Barrier Diode
TPCF8A01
Notebook PC Applications Portable Equipment Applications
• • • • • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) High forward transfer admittance: |Yfs| = 5.4 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA) Low forward voltage: VFM(2) = 0.46V(typ.) Unit: mm
Absolute Maximum Ratings
MOSFET (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (Note 4) Symbol VDSS VDGR VGSS ID IDP EAS IAR EAR Rating 20 20 ±12 3 12 1.46 1.5 0.
TPCF8A01 Datasheet
