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TPCF8B01
TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode
TPCF8B01
Notebook PC Applications Portable Equipment Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.) • Low leakage current: IDSS =-10 μA (max) (VDS = -20 V) • Enhancement-model: Vth = -0.5 to-1.2 V (VDS =-10 V, ID = -200 μA) • Low forward voltage: VFM(2) = 0.46 V (typ.
TPCF8B01 Datasheet
