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SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
2SA1243
POWER AMPLIFIER APPLICATIONS LttK KHUiU MNU LAK b I LKtU UU I PU I blAbt AP PLICATIONS.
FEATURES . Good Linearity of hEE . Complementary to 2SC3073
&8MAX.
I52±0i2
F
Unit in mm
Si
o . 0. 6 MAX
-J
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Ta=25°C Tc=25°C
Junction Temperature
Storage Temperature Range
SYMBOL v CBO VCEO Vebo ic IB
?C
T
J
T stg
RATING UNIT
-30 V
-30 V
-5 V
-3 A
-0.6
A
1.0 W
10
150 -55 -150
°C
o C
a 95 MAX. .!
j
Q6±ai5
|
) li
M
s
o w H
a6MAX.
a
.D
2.3 2.3
gpi efu rfjJL
X < s H in H
_j _
1. BASE 2.
2SA1243 Datasheet
