2SB1682 - Silicon PNP Triple Diffused Type Transistor

Toshiba

Datasheet Details

Part number	2SB1682
Manufacturer	Toshiba
File Size	452.27 KB
Description	Silicon PNP Triple Diffused Type Transistor
Datasheet	2SB1682 Datasheet

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2SB1682 TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington power transistor) 2SB1682 ○ Power Amplifier Applications ○ High-Power Switching Applications • • High-breakdown voltage: VCEO = −160 V (min) Complementary to 2SD2636 Unit: mm Maximum Ratings (Tc = 25°C) Characteristic Sy Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC I Pulse I mbol VCBO VCEO VEBO C CP Rating −160 −160 −5 −8 −15 −1 100 W 150 −55 to 150 Unit V V V A A 1.Base 2.Collector(heatsink) 3.Emitter IB PC Tj Tstg °C °C JEDEC JEITA TOSHIBA 2 ― ― -16C1A Equivalent Circuit Collector Weight: 4.7 g (typ.