Datasheet Summary
TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington power transistor)
○ Power Amplifier Applications ○ High-Power Switching Applications
- - High-breakdown voltage: VCEO =
- 160 V (min) plementary to 2SD2636 Unit: mm
Maximum Ratings (Tc = 25°C)
Characteristic Sy Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC I Pulse I mbol VCBO VCEO VEBO
C CP
Rating
- 160
- 160
- 5
- 8
- 15
- 1 100 W 150
- 55 to 150
Unit V V V A A 1.Base 2.Collector(heatsink) 3.Emitter
IB PC Tj Tstg
°C °C
JEDEC JEITA TOSHIBA 2
― ― -16C1A
Equivalent Circuit
Collect...