2SB1682 Description
2SB1682 TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington power transistor) 2SB1682 ○ Power Amplifier Applications ○ High-Power Switching Applications High-breakdown voltage: VCEO = −160 V (min) plementary to 2SD2636 Unit: ― ― ― ― ―1 ― ― Max −10 −10 ―V ― 5000 −3.0 V −3.0 V ― MH Unit µA µA z IB2 Input ∼ − 50 V 7Ω Output ―.