• Part: 2SC1955
  • Description: SILICON NPN TRANSISTOR
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 61.42 KB
Download 2SC1955 Datasheet PDF
Toshiba
2SC1955
2SC1955 is SILICON NPN TRANSISTOR manufactured by Toshiba.
FEATURES - . Output Power : Po=2.8W (Min.) ( f=175MHz, VCC =13.5V, Pi=0.15W) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VC C=13.5V, P =4W, f=175MHz MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25 °C) Junction Temperature Storage Temperature Range SYMBOL v CB0 VCEO Vebo ic ?C T T stg RATING 35 17 3.5 0.8 -65 ~175 UNIT V V V A W °C °C Unit in mm J^9.Z9lll AX. 0'a45MAX 1 00. A 5 1 0&O8 c5 - s to «5 - M s ? <T" 3 ( Xv45 1. EMITTER (CASE) 2. BASE 3. COLLECTOR JEDEC TO- 39 EIAJ TC- 5.TB-5B TOSHIBA 2-8B1B Weight 1.2s ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC...