Datasheet4U Logo Datasheet4U.com

2SC1955 - SILICON NPN TRANSISTOR

Key Features

  • . Output Power : Po=2.8W (Min. ) ( f=175MHz, VCC =13.5V, Pi=0.15W) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VC C=13.5V, P =4W, f=175MHz.

📥 Download Datasheet

Datasheet Details

Part number 2SC1955
Manufacturer Toshiba
File Size 61.42 KB
Description SILICON NPN TRANSISTOR
Datasheet download datasheet 2SC1955 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC1953 Power Transistors Panasonic Semiconductor
2SC1953 NPN Transistor INCHANGE
2SC1953 SILICON POWER TRANSISTOR SavantIC
2SC1957 SILICON NPN TRANSISTOR BLUE ROCKET ELECTRONICS
2SC1959 PNP Transistor Toshiba Semiconductor

Other Datasheets by Toshiba

Part Number Description
2SC1000 Silicon NPN Transistor
2SC1001 SILICON NPN TRANSISTOR
2SC108A Silicon NPN Epitaxial Type Transistor
2SC109A Silicon NPN Epitaxial Type Transistor
2SC1164 SILICON NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SILICON NPN EPITAXIAL PLANAR TYPE 2SC1955 VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES • . Output Power : Po=2.8W (Min.) ( f=175MHz, VCC =13.5V, Pi=0.15W) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VC C=13.5V, P =4W, f=175MHz MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25 °C) Junction Temperature Storage Temperature Range SYMBOL v CB0 VCEO Vebo ic ?C T J T stg RATING 35 17 3.5 0.8 7.5 175 -65 ~175 UNIT V V V A W °C °C Unit in mm J^9.Z9lllAX. 0'a45MAX 1 1 00. A 5 1 0&O8 c5 - s to «5 - M s 03 H ?