• Part: 2SC2117
  • Description: SILICON NPN TRANSISTOR
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 62.42 KB
Download 2SC2117 Datasheet PDF
Toshiba
2SC2117
2SC2117 is SILICON NPN TRANSISTOR manufactured by Toshiba.
FEATURES : . Output Power : Po=2.8W (Min.) ( f=175MHz, VCC=13.5V, Pi=0.15W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCc=13.5V, P Q =4W, f=175MHz 0&39MAX. 08.5MAX, Unit in mm ^0.4 5 2 6 MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL Vc BO VCEO Ve BO ic PC stg RATING 35 17 3.5 0.8 -65-175 UNIT 1. EMITTER CCASE) 2. BASE 3. COLLECTOR °C TOSHIBA 2-9A1B Weight : 3.7g ELECTRICAL CHARACTERISTICS (Ta=25 °c) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage JCBO V(BR)CB0 v (BR) CEO V CB=15V, I E=0 I C =lm A, I E=0 IC=5m A, Ib=0 Emitter-Base Breakdown Voltage v (BR)EB0 I E=lm A, lc=0 DC Current Gain h...