2SC2118
2SC2118 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES
: . Output Power : P =5W (Min.)
( f=175MHz, Vcc=13.5V, Pi=0.6W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ Vcc=15V, Pi=0.6W, f=175MHz
2fe.39MAX (2fe.5MAX
Unit in mm
0(145
I 2 6 MAX.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL Vc BO VCEO v EB0 ic PC stg
RATING 35 17
3.5 1.4
UNIT
1. EMITTER (CASE) 2. BASE 3. COLLECTOR
-65-175
TOSHIBA Weight : 3.7g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage
ICBO v (BR)CB0 v (BR) CEO
V CB=15V, I E=0 I C=2m A, I E =0 I C=10m A, Ib=0
Emitter-Base Breakdown Voltage DC Current Gain
V(BR)EB0 I E=0.2m A, lc=0 h-FE
V C E=5V, I C=1A
Collector Output Capacitance Cob
V CB=10V, Ie=0, f=l MHz
Output Power
Po
(Fig.)
Power Gain Collector Efficiency
Gpe
V C C=13.5V, f=175MHz,
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