• Part: 2SC2118
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 58.49 KB
Download 2SC2118 Datasheet PDF
Toshiba
2SC2118
2SC2118 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES : . Output Power : P =5W (Min.) ( f=175MHz, Vcc=13.5V, Pi=0.6W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ Vcc=15V, Pi=0.6W, f=175MHz 2fe.39MAX (2fe.5MAX Unit in mm 0(145 I 2 6 MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL Vc BO VCEO v EB0 ic PC stg RATING 35 17 3.5 1.4 UNIT 1. EMITTER (CASE) 2. BASE 3. COLLECTOR -65-175 TOSHIBA Weight : 3.7g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage ICBO v (BR)CB0 v (BR) CEO V CB=15V, I E=0 I C=2m A, I E =0 I C=10m A, Ib=0 Emitter-Base Breakdown Voltage DC Current Gain V(BR)EB0 I E=0.2m A, lc=0 h-FE V C E=5V, I C=1A Collector Output Capacitance Cob V CB=10V, Ie=0, f=l MHz Output Power Po (Fig.) Power Gain Collector Efficiency Gpe V C C=13.5V, f=175MHz, -...