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SILICON NPN EPITAXIAL PLANAR TYPE
HIGH POWER AMPLIFIER FOR CATV APPLICATIONS.
FEATURES . Wide Band and High Gain for Class A Amplifier.
Unit Ln mm
09.39MAX. _
£*8.45MAX *
X
. All Electrodes Insulated from Case. MAXIMUM RATINGS (Ta=25 °C)
00.4:5
1
I1
05.08
. «5
•z,
3 o
05
^
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25°C)
SYMBOL VcBO VCEO Vebo ic
pc
Junction Temperature Storage Temperature Range
TJ T stg
RATING 40 15
3.5 350
3.5
175
-65-175
UNIT V V V
mA
W
°C °C
:?'-' j
\kL /
45° yk,r.*
/ 1.
2. 3. 4.
EMITTER BASE COLLECTOR CASE
JEDEC
EIA J TOSHIBA
TO-33 TC-5 TB-i 4B
,
2-8D1A
Weight : 1.
2SC2318 Datasheet
