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SILICON NPN EPITAXIAL PLANAR TYPE
2SC2380
UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES . Output Power : P =12W(Min.)
(f=470MHz, V C C=12.6V, Pi=3W) . 100% Tested for Load Mismatch Stress at All Phase
Angles with 30:1 VSWR @ V C c=12.6V, Pi=3W, f=470MHz
Unit in mm
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
SYMBOL
RATING UNIT
Collector-Base Voltage
VCBO
35
Collector-Emitter Voltage
v CE0
17
Emitter-Base Voltage
VEBO
3.5
Collector Current
IC
2.8
Collector Power Dissipation 30
(Tc=25°C)
1. EMITTER 2. BASE 3. EMITTER 4.
2SC2380 Datasheet
