2SC2380
2SC2380 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES
. Output Power : P =12W(Min.)
(f=470MHz, V C C=12.6V, Pi=3W) . 100% Tested for Load Mismatch Stress at All Phase
Angles with 30:1 VSWR @ V C c=12.6V, Pi=3W, f=470MHz
Unit in mm
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
SYMBOL
RATING UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage v CE0
Emitter-Base Voltage
VEBO
Collector Current
Collector Power Dissipation 30
(Tc=25°C)
1. EMITTER 2. BASE 3. EMITTER 4. COLLECTOR
Junction Temperature Storage Temperature Range
L stg
ELECTRICAL CHARACTERISTICS (Tc=25°C)
165 -175
TOSHIBA
2-10H 1A
Weight : 4g
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Collector-Base Breakdown Voltage
I CBO v (BR)CB0
Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage v (BR) CEO v (BR)EB0
DC Current Gain n FE
Collector Output Capacitance Cob
Output Power
Po
Power...
