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SILICON NPN EPITAXIAL PLANAR TYPE
UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES . Output Power : P Q =3W(Min.)
(f=470MHz, V CC=12.6V, Pi=0.4W) . 100% Tested for Load Mismatch Stress at All Phase
Angles with 30:1 VSWR @ V CC=15V, P±* : 0.4W, f=470MHz
Unit in mm
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
SYMBOL
RATING UNIT
Collector-Base Voltage
VcBO
35
Collector-Emitter Voltage
VcEO
17
Emitter-Base Voltage
Collector Current Collector Power Dissipation
(Tc=25°C)
VEBO ic PC
3.5 0.8 7.5
1. EMITTER 2. BASE 3. EMITTER 4.
2SC2391 Datasheet
