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SILICON NPN EPITAXIAL PLANAR TYPE
UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES . Output Power : P =25W(Min.)
(f=470MHz, V CC=12.6V, Pi=10W) . 100% Tested for Load Mismatch Stress at All Phase
Angles with 30:1 VSWR @ V C c=12.6V, Pi=10W, f=470MHz
Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL 'CBO 'CEO
'EBO IC PC
L stg
RATING 35 17
3.5
UNIT V
50
I. EMITTER Z. BASE 3. EMITTER 4. COLLECTOR
175
-65~175
°C EIA.
2SC2381 Datasheet
