2SC2379 - Silicon NPN Transistor

Toshiba

Key Features

. Output Power : P =6W(Min. ) (f=470MHz, VCC=12.6V, Pi=lW) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ V C C=12.5V, P =6.5W, f=470MHz Unit in mm.

2SC2379 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC2379
Manufacturer	Toshiba
File Size	62.43 KB
Description	Silicon NPN Transistor
Datasheet	2SC2379 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN EPITAXIAL PLANAR TYPE 2SC2379 UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES . Output Power : P =6W(Min.) (f=470MHz, VCC=12.6V, Pi=lW) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ V C C=12.5V, P =6.