2SC3301 - Silicon NPN Transistor

Toshiba

Key Features

. NF=1.7dB, lS21el 2=14.5dB (f=500MHz) . NF=2.3dB, lS21el 2=9dB (f=1000MHz) 4.6 MAX, 1.7 MAX . Unit in mm 1.6 MAX. Q4±Q05.

2SC3301 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC3301
Manufacturer	Toshiba
File Size	134.34 KB
Description	Silicon NPN Transistor
Datasheet	2SC3301 Datasheet

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Full PDF Text Transcription (Reference)

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: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3301 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. FEATURES . NF=1.7dB, lS21el 2=14.5dB (f=500MHz) . NF=2.3dB, lS21el 2=9dB (f=1000MHz) 4.6 MAX, 1.7 MAX . Unit in mm 1.6 MAX. Q4±Q05 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO RATING 15 UNIT +ao8 a45-ao5 -i-ao8 a.4-ao5 1.5 ±ai M- + 0.08 Q4-Q05 1.5±ai Collector-Emitter Voltage VcEO 7.5 Emitter-Base Voltage Base Current VEBO IB 40 mA Collector Current IC 80 mA Collector Power Dissipation PC 300 mW Collector Power Dissipation PC 800 mW Junction Temperature 125 Storage Temperature Range Tstg -55-125 PC % : When mounted cermic substrate of 250mm2 x0.8t La rfJ 1. BASE 2. COLLECTOR (HEAT SINK) 2.