2SC3308
2SC3308 is SILICON NPN EPITAXIAL TYPE TRANSISTOR manufactured by Toshiba.
FEATURES
. Low Collector Saturation Voltage
: v CE(sat)=0.4V(Max.) at Ic=3A . High Speed Switching Time : t s tg=l . 0/is(Typ . ) . plementary to 2SA1308.
INDUSTRIAL APPLICATIONS Unit in mm
1H3MAX.
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Collector Power Dissipation (Tc=25°C)
Junction Temperature
Storage Temperature Range
SYMBOL Vc BO VCEO VEBO ic ICP
RATING 100 80
PC 30
Tstg
-55-150
UNIT
1. BASE 2. COLLECTOR (HEAT SINK' 3. EMITTER °C
JEDEC
ELECTRICAL CHARACTERISTICS (Ta =25°C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage l EBO v (BR)CE0
TOSHIBA
2-1 OKI
Weight : 2. 3g
TEST CONDITION VCB=100V, I E=0 VEB=7V, I C =0
MIN.
- TYP.
- MAX.
1 1
IC=10m A, I B...
