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2SC3308 - SILICON NPN EPITAXIAL TYPE TRANSISTOR

Key Features

  • . Low Collector Saturation Voltage : vCE(sat)=0.4V(Max. ) at Ic=3A . High Speed Switching Time : t s tg=l . 0/is(Typ . ) . Complementary to 2SA1308.

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Datasheet Details

Part number 2SC3308
Manufacturer Toshiba
File Size 133.81 KB
Description SILICON NPN EPITAXIAL TYPE TRANSISTOR
Datasheet download datasheet 2SC3308 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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:A SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. FEATURES . Low Collector Saturation Voltage : vCE(sat)=0.4V(Max.) at Ic=3A . High Speed Switching Time : t s tg=l . 0/is(Typ . ) . Complementary to 2SA1308. INDUSTRIAL APPLICATIONS Unit in mm 1H3MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VcBO VCEO VEBO ic ICP RATING 100 80 PC 30 Tstg 150 -55-150 UNIT 1. BASE 2. COLLECTOR (HEAT SINK' 3.